BC856AW
器件描述：Surface mount Si-Epitaxial PlanarTransistors
器件厂商：DIOTEC [Diotec Semiconductor]
文件大小：184.51KB，共2页
Sponsor by e络盟器件资料摘要：
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses t
p
= 300 g58s, duty cycle g35 2% – Gemessen mit Impulsen t
p
= 300 g58s, Schaltverhältnis g35 2%
16 01.11.2003
12
3
Type
Code
2.1
±0
.
1
2
±0.1
1
±0.1
1.
2
5
±0
.
1
0.3
1.3
BC 856W ... BC 860W General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
Power dissipation – Verlustleistung 200 mW
Plastic case SOT-323
Kunststoffgehäuse
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25g47C) Grenzwerte (T
A
= 25g47C)
BC 856W BC 857W
BC 860W
BC 858W
BC 859W
Collector-Emitter-voltage B open - V
CE0
65 V 45 V 30 V
Collector-Base-voltage E open - V
CB0
80 V 50 V 30 V
Emitter-Base-voltage C open - V
EB0
5 V
Power dissipation – Verlustleistung P
tot
200 mW
1
)
Collector current – Kollektorstrom (DC) - I
C
100 mA
Peak Collector current – Kollektor-Spitzenstrom - I
CM
200 mA
Peak Base current – Basis-Spitzenstrom - I
BM
200 mA
Peak Emitter current – Emitter-Spitzenstrom I
EM
200 mA
Junction temperature – Sperrschichttemperatur T
j
150g47C
Storage temperature – Lagerungstemperatur T
S
- 65…+ 150g47C
Characteristics (T
j
= 25g47C) Kennwerte (T
j
= 25g47C)
Group A Group B Group C
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
- V
CE
= 5 V, - I
C
= 10 g58Ah
FE
typ. 90 typ. 150 typ. 270
- V
CE
= 5 V, - I
C
= 2 mA h
FE
110...220 200...450 420...800
h-Parameters at - V
CE
= 5V, - I
C
= 2 mA, f = 1 kHz
Small signal current gain – Stromverstärkung h
fe
typ. 220 typ. 330 typ. 600
Input impedance – Eingangs-Impedanz h
ie
1.6...4.5 kg83 3.2...8.5 kg83 6...15 kg83
Output admittance – Ausgangs-Leitwert h
oe
18 < 30 g58S 30 < 60 g58S 60 < 110 g58S
Reverse voltage transfer ratio
Spannungsrückwirkung
h
re
typ.1.5 *10
-4
typ. 2 *10
-4
typ. 3 *10
-4
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses t
p
= 300 g58s, duty cycle g35 2% – Gemessen mit Impulsen t
p
= 300 g58s, Schaltverhältnis g35 2%
16 01.11.2003
12
3
Type
Code
2.1
±0
.
1
2
±0.1
1
±0.1
1.
2
5
±0
.
1
0.3
1.3
BC 856W ... BC 860W General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
Power dissipation – Verlustleistung 200 mW
Plastic case SOT-323
Kunststoffgehäuse
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25g47C) Grenzwerte (T
A
= 25g47C)
BC 856W BC 857W
BC 860W
BC 858W
BC 859W
Collector-Emitter-voltage B open - V
CE0
65 V 45 V 30 V
Collector-Base-voltage E open - V
CB0
80 V 50 V 30 V
Emitter-Base-voltage C open - V
EB0
5 V
Power dissipation – Verlustleistung P
tot
200 mW
1
)
Collector current – Kollektorstrom (DC) - I
C
100 mA
Peak Collector current – Kollektor-Spitzenstrom - I
CM
200 mA
Peak Base current – Basis-Spitzenstrom - I
BM
200 mA
Peak Emitter current – Emitter-Spitzenstrom I
EM
200 mA
Junction temperature – Sperrschichttemperatur T
j
150g47C
Storage temperature – Lagerungstemperatur T
S
- 65…+ 150g47C
Characteristics (T
j
= 25g47C) Kennwerte (T
j
= 25g47C)
Group A Group B Group C
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
- V
CE
= 5 V, - I
C
= 10 g58Ah
FE
typ. 90 typ. 150 typ. 270
- V
CE
= 5 V, - I
C
= 2 mA h
FE
110...220 200...450 420...800
h-Parameters at - V
CE
= 5V, - I
C
= 2 mA, f = 1 kHz
Small signal current gain – Stromverstärkung h
fe
typ. 220 typ. 330 typ. 600
Input impedance – Eingangs-Impedanz h
ie
1.6...4.5 kg83 3.2...8.5 kg83 6...15 kg83
Output admittance – Ausgangs-Leitwert h
oe
18 < 30 g58S 30 < 60 g58S 60 < 110 g58S
Reverse voltage transfer ratio
Spannungsrückwirkung
h
re
typ.1.5 *10
-4
typ. 2 *10
-4
typ. 3 *10
-4