LESHAN RADIO COMPANY, LTD.
M5–1/5
1
3
2
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BC856 BC857 BC858 Unit
Collector–Emitter Voltage V
CEO
–65 –45 –30 V
Collector–Base Voltage V
CBO
–80 –50 –30 V
Emitter–Base Voltage V
EBO
–5.0 –5.0 –5.0 V
Collector Current — Continuous I
C
–100 –100 –100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
P
D
T
A
= 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation P
D
Alumina Substrate, (2) T
A
= 25°C 300 mW
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F;
BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage BC856 Series – 65 — —
(I
C
= –10 mA) BC857 Series V
(BR)CEO
– 45 — — v
BC858 Series – 30 — —
Collector–Emitter Breakdown Voltage BC856 Series – 80 — —
(I
C
= –10 µA, V
EB
= 0) BC857 Series V
(BR)CES
– 50 — — v
BC858 Series – 30 — —
Collector–Base Breakdown Voltage BC856 Series – 80 — —
(I
C
= – 10 µA) BC857 Series V
(BR)CBO
– 50 — — v
BC858 Series – 30 — —
Emitter–Base Breakdown Voltage BC856 Series – 5.0 — —
(I
E
= – 1.0 µA) BC857 Series, V
(BR)EBO
– 5.0 — — v
BC858 Series – 5.0 — —
Collector Cutoff Current (V
CB
= – 30 V)
I
CBO
— — – 15 nA
(V
CB
= – 30 V, T
A
= 150°C) — — – 4.0 µA
BC856ALT1, BLT1
BC857ALT1, BLT1
BC858ALT1, BLT1
CLT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
1.FR–5=1.0 x 0.75 x 0.062in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.