©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC856/
857/
858
/859
/86
0
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a
=25°C unless otherwise noted
Electrical Characteristics T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BC856
: BC857/860
: BC858/859
-80
-50
-30
V
V
V
V
CEO
Collector-Emitter Voltage
: BC856
: BC857/860
: BC858/859
-65
-45
-30
V
V
V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current (DC) -100 mA
P
C
Collector Power Dissipation 310 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
= -30V, I
E
=0 -15 nA
h
FE
DC Current Gain V
CE
= -5V, I
C
= -2mA 110 800
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
-90
-250
-300
-650
mV
mV
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
-700
-900
mV
mV
V
BE
(on) Base-Emitter On Voltage V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA
-600 -660 -750
-800
mV
mV
f
T
Current Gain Bandwidth Product V
CE
= -5V, I
C
= -10mA
f=100MHz
150 MHz
C
ob
Output Capacitance V
CB
= -10V, I
E
=0, f=1MHz 6 pF
NF Noise Figure : BC856/857/858
: BC859/860
: BC859
: BC860
V
CE
= -5V, I
C
= -200µA
f=1KHz, R
G
=2KΩ
V
CE
= -5V, I
C
= -200µA
R
G
=2KΩ, f=30~15000Hz
2
1
1.2
1.2
10
4
4
2
dB
dB
dB
dB
BC856/857/858/859/860
Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC859, BC860
• Complement to BC846 ... BC850
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3