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BC856

器件描述:Small Signal Transistors (PNP)
器件厂商:GE [General Semiconductor]
厂商主页:http://www.vishay.com/
文件大小:231.74KB,共6页
Sponsor by e络盟
器件资料摘要:
FEATURES
Small Signal Transistors (PNP)
Dimensions in inches and (millimeters)
.016 (0.4)
.056 (
1
.43
)
.037(0.95) .037(0.95)
ma
x
.
.004
(
0
.1
)
.122 (3.1)
.016 (0.4) .016 (0.4)
3
12
Top View
.102 (2.6)
.007 (
0
.17
5
)
.0
45 (
1
.15)
.118 (3.0)
.052 (
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37 (
0
.95)

Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C

ambient temperature unless otherwise specified
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
SOT-23
4/98
Marking code
Ty p e
Marking
BC856A
B
BC857A
B
C
BC858A
B
C
3A
3B
3E
3F
3G
3J
3K
3L
Symbol Value Unit
Collector-Base Voltage BC856
BC857
BC858, BC859
–V
CBO
–V
CBO
–V
CBO
80
50
30
V
V
V
Collector-Emitter Voltage BC856
BC857
BC858, BC859
–V
CES
–V
CES
–V
CES
80
50
30
V
V
V
Collector-Emitter Voltage BC856
BC857
BC858, BC859
–V
CEO
–V
CEO
–V
CEO
65
45
30
V
V
V
Emitter-Base Voltage –V
EBO
5V
Collector Current –I
C
100 mA
Peak Collector Current –I
CM
200 mA
Peak Base Current –I
BM
200 mA
Peak Emitter Current I
EM
200 mA
Power Dissipation at T
SB
= 50 °C P
tot
310
1)
mW
Junction Temperature T
j
150 °C
Storage Temperature Range T
S
–65 to +150 °C
Ty p e M a r ki n g
BC859A
B
C
4A
4B
4C
PNP Silicon Epitaxial Planar Transistors
for switching and AF amplifier applications.
Especially suited for automatic insertion in
thick- and thin-film circuits.
These transistors are subdivided into three groups A, B
and C according to their current gain. The type BC856 is
available in groups A and B, however, the types BC857,
BC858 and BC859 can be supplied in all three groups.
The BC859 is a low noise type.
As complementary types, the NPN transistors
BC846 … BC849 are recommended.
BC856 THRU BC859