©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002
2N38
20
Epitaxial Silicon Transistor
Absolute Maximum Ratings* T
C
=25°C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%
Thermal Characteristics T
A
=25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”
Symbol Parameter Ratings Units
V
DG
Drain-Gate Voltage -20 V
V
GS
Gate-Source Voltage 20 V
I
GF
Forward Gate Current 10 mA
T
STG
Storage Temperature Range -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)GSS
Gate-Source Breakdwon Voltage I
G
= 10µA, V
DS
= 0 20 V
I
GSS
Gate Reverse Current V
GS
= 10V, V
DS
= 0 20 nA
V
GS
(off) Gate-Source Cutoff Voltage V
DS
= -10V, I
D
= -10µA8.
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current * V
DS
= -10V, V
GS
= 0 -0.3 -15 mA
Small Signal Characteristics
gfs Forward Transfer Conductance V
DS
= -10V, V
GS
= 0, f = 1.0KHz 800 5000 µmhos
C
iss
Input Capacitance V
DS
= -10V, V
GS
= 0, f = 1.0KHz 32 pF
C
rss
Reverse Transfer Capacitance V
DS
= -10V, V
GS
= 0, f = 1.0KHz 16 pF
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 125 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
2N3820
P-Channel General Purpose Amplifier
This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources.
Sourced from process 89.
TO-92
1. Drain 2. Gate 3. Source
1