BC848BW / BC848B
Transistors
Rev.A 1/5
NPN General Purpose Transistor
BC848BW / BC848B


zFeatures
1) BVCEO minimum is 30V (IC=1mA)
2) Complements the BC858B / BC858BW.















zExternal dimensions (Unit : mm)
BC848BW
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
BC848B, BC848C
0~0.1
(2)(1)
(3)
0.1~0.4
2.1
±
0.1
1.25
±
0.1
0.9±0.1
0.2 0.7±0.1
0.15±0.05
0.3
2.0±0.2
1.3±0.1
0.65 0.65
+0.1
−0
All terminals have same dimensions
All terminals have same dimensions
0~0.1
0.2Min.
2.4
±
0.2
1.3
0.95
0.45±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.95 0.95
+
0.2
−
0.1
−0.1
+0.2
+0.1
−0.06+0.1
−0.05
(2)(1)
(3)

zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
Tj
Tstg
Limits
30
30
5
0.1
0.35
150
−65~+150
Unit
V
V
V
A
PC
0.2
0.2
W
W
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
BC848BW
BC848B
Storage temperature
Collector power
dissipation
∗ When mounted on a 7×5×0.6mm ceramic board.
∗


zElectrical characteristics (Ta=25°C)
Parameter Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=30V
VCB=30V, Ta=150°C
IC/IB=100mA/5mA
IC/IB=10mA/0.5mA
VCE/IC=5V/10mA
VCE=5V, IE=−20mA, f=100MHz
VCB=10V, IE=0, f=1MHz
VEB=0.5V, IE=0, f=1MHz
Typ.
−
−
−
−
−
−
−
−
200
3
8
− VCE/IC=5V/2mA
Symbol
BVCBO
BVCEO
BVEBO
ICBO
VBE(on)
VCE(sat)
fT
Cob
Cib
hFE
Min.
30
30
5
−
−
0.58
−
−
−
−
−
200
Max.
−
−
−
100
5
0.77
0.6
0.25
−
−
−
450
Unit
V
V
V
µA
nA
V
V
MHz
pF
pF
−
(SPEC-C22)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector output capacitance
DC current transfer ratio