BC 847PN
Semiconductor Group
May-12-19981
NPN/PNP Silicon AF Transistor Array
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN/PNP
Transistors in one package

Tape loading orientation
PIN Configuration
1 = E 2 = BNPN-Transistor 6 = C
PNP-Transistor 4 = E 5 = B 3 = C
Type Marking PackageOrdering Code
Q62702-C2374 SOT-363BC 847PN 1Ps
Maximum Ratings
Parameter ValueSymbol Unit
VCollector-emitter voltage V
CEO
45
Collector-base voltage 50V
CBO
Collector-emitter voltage V
CES
50
V
EBO
Emitter-base voltage 5
mADC collector current I
C
100
200Peak collector current I
CM
Total power dissipation, T
S
= 115 °C mWP
tot
250
T
j
150Junction temperature °C
-65...+150Storage temperature T
stg
Thermal Resistance
Junction ambient
1)
R
thJA
£ 275 K/W
Junction - soldering point R
thJS
£ 140
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu