LESHAN RADIO COMPANY, LTD.
M36–1/3
General Purpose Transistors
NPN Silicon
1
3
2
BC847BRLT1
is LRC prefered Device
CASE 318–07, STYLE 6
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
50 V
Collector–Base Voltage V
CBO
60 V
Emitter–Base Voltage V
EBO
7.0 V
Collector Current — Continuous I
C
150 mAdc
Collector power dissipation P
C
0.2 W
Junction temperature T
j
150 °C
Storage temperature T
stg
-55 ~+150 °C
DEVICE MARKING
BC847BRLT1 =G1F
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Collector–Emitter Breakdown Voltage
V
(BR)CEO
50 — — V
(I
C
= 1 mA)
Emitter–Base Breakdown Voltage
V
(BR)EBO
7——V
(I
E
= 50 µA)
Collector–Base Breakdown Voltage
V
(BR)CBO
60 — — V
(I
C
= 50 µA)
Collector Cutoff Current
I
CBO
— — 0.1 µA
(V
CB
= 60 V)
Emitter cutoff current
I
EBO
— — 0.1 µA
(V
EB
= 7 V)
Collector-emitter saturation voltage
V
CE(sat)
— — 0.4 V
(I
C
/ I
B
= 50 mA / 5m A)
DC current transfer ratio h
FE
120 –– 560 ––
(V
CE
= 6 V, I
C
= 1mA)
Transition frequency
f
T
— 180 –– MHz
(V
CE
= 12 V, I
E
= – 2mA, f =30MHz )
Output capacitance
C
ob
— 2.0 3.5 pF
(V
CB
= 12 V, I
E
= 0A, f =1MHz )
h
FE
values are classified as follows:
QRS
hFE 120~270 180~390 270~560
2
EMITTER
3
COLLECTOR
1
BASE
*