BC847B
Transistors
Rev.A 1/5
NPN General Purpose Transistor
BC847B


zFeatures
1) BVCEO < 45V (IC=1mA)
2) Complements the BC857B.


zPackage, marking, and Packaging specifications
BC847B
SST3
G1F
T116
3000
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)





zExternal dimensions (Unit : mm)
ROHM : SST3 (1) Emitter
(2) Base
(3) Collector
0~0.1
0.2Min.
2.4
±
0.2
1.3
0.95
0.45±0.1
0.15
0.4
2.9±0.2
1.9±0.2
0.95 0.95
+
0.2
−
0.1
−0.1
+0.2
+0.1
−0.06+0.1
−0.05
(2)(1)
(3)
All terminals have the same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
Tj
Tstg
Limits
50
45
6
0.1
0.35
150
−65 to +150
Unit
V
V
V
A
∗
PC
0.2
W
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power dissipation
∗ When mounted on a 7×5×0.6mm ceramic board.


zElectrical characteristics (Ta=25°C)
Parameter Min. Typ. Max. Unit Conditions
50
45
6
−
−
−
−
−
−
−
−
−
−
15
5
V
V
V
µA
nA
IC=50µA
IC=1mA
IE=50µA
VCB=30V
VCB=30V, Ta=150°C
−
0.58 − 0.77 V
−−0.6 IC/IB=100mA/5mA
−−0.25
V
IC/IB=10mA/0.5mA
VCE/IC=5V/10mA
200 450 −
−
−
200
3
−
−
MHz
pF
VCE=5V, IE=−20mA, f=100MHz
VCB=10V, IE=0, f=1MHz
Symbol
BVCBO
BVCEO
BVEBO
ICBO
VBE(on)
VCE(sat)
hFE
fT
Cob
Cib − 8 − pF VEB=0.5V, IC=0, f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance