BC847
SMALL SIGNAL NPN TRANSISTORS
n SILICON EPITAXIALPLANAR NPN
TRANSISTORS
n MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
n LOW LEVEL GENERAL PURPOSE
n PNP COMPLEMENT IS BC857
INTERNAL SCHEMATIC DIAGRAM
October 1997
1
2
3
SOT-23
Type Marking
BC847B 1F
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE =0) 50 V
VCBO Collector-Base Voltage (IE =0) 50 V
VCEO Collector-Emitter Voltage (IB =0) 45 V
V
EBO
Emitter-Base Voltage (I
C
=0) 6 V
I
C
Collector Current 0.1 A
ICM Collector Peak Current 0.2 A
I
BM
Base Peak Current 0.2 A
IEM Emitter Peak Current 0.2 A
Ptot Total Dissipation at Tc =25
o
C 300 mW
T
stg
Storage Temperature -65 to 150
o
C
Tj Max. Operating Junction Temperature 150
o
C
1/4