BC846S
Nov-29-20011
NPN Silicon AF Transistor Array
G01 For AF input stages and driver applications
G01 High current gain
G01 Low collector-emitter saturation voltage
G01 Two ( galvanic) internal isolated Transistors
with good matching in one package
VPS05604
6
3
1
5
4
2
EHA07178
6 54
321
C1 B2 E2
C2B1E1
TR1
TR2
Type Marking Pin Configuration Package
BC846S 1Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1
SOT363
Maximum Ratings
Parameter Symbol Value Unit
V
CEO
65Collector-emitter voltage V
Collector-base voltage 80V
CBO
Collector-emitter voltage V
CES
80
Emitter-base voltage 6V
EBO
DC collector current I
C
100 mA
Peak collector current 200I
CM
250Total power dissipation, T
S
= 115 °C P
tot
mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01140 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance