BC846PN
Nov-29-20011
NPN/PNP Silicon AF Transistor Array
G01 For AF input stages and driver applications
G01 High current gain
G01 Low collector-emitter saturation voltage
G01 Two (galvanic) internal isolated NPN/PNP
Transistors in one package

Tape loading orientation
VPS05604
6
3
1
5
4
2
EHA07177
6 54
321
C1 B2 E2
C2B1E1
TR1
TR2
EHA07193
123
456
W1s
Direction of Unreeling
Top View
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
Type Marking Pin Configuration Package
BC846PN 1Os 1=E 2=B 3=C 4=E 5=B 6=C
SOT363
Maximum Ratings
Parameter ValueSymbol Unit
VCollector-emitter voltage
V
CEO
65
Collector-base voltage 80
V
CBO
Collector-emitter voltage
V
CES
V80
V
EBO
VEmitter-base voltage 5
mADC collector current
I
C
100
200Peak collector current
I
CM
Total power dissipation, T
S
= 115 °C
mW
P
tot
250
T
j
150Junction temperature °C
-65 ... 150Storage temperature
T
stg
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01140 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance