BC 846PN
Semiconductor Group
Sep-07-19981
NPN/PNP Silicon AF Transistor Array
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN/PNP
Transistors in one package

Tape loading orientation
VPS05604
6
3
1
5
4
2
PIN Configuration
Type Marking Package NPN-TransistorOrdering Code 1 = E 6 = C2 = B
Q62702-C2537 SOT-363 PNP-Transistor 4 = E 3 = C5 = BBC 846PN 1Os
Maximum Ratings
Parameter ValueSymbol Unit
VCollector-emitter voltage
V
CEO
65
Collector-base voltage 80
V
CBO
Collector-emitter voltage
V
CES
V80
V
EBO
VEmitter-base voltage 5
mADC collector current
I
C
100
200Peak collector current
I
CM
Total power dissipation, T
S
= 115 °C
mW
P
tot
250
T
j
150Junction temperature °C
-65...+150Storage temperature
T
stg
Thermal Resistance
Junction ambient
1)
R
thJA
£ 275
K/W
Junction - soldering point
R
thJS
£ 140
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm
2
Cu
Semiconductor Group 1 1998-11-01