LESHAN RADIO COMPANY, LTD.
K4–1/4
1
3
2
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol BC846 BC847 BC848 Unit
Collector–Emitter Voltage V
CEO
65 45 30 V
Collector–Base Voltage V
CBO
80 50 30 V
Emitter–Base Voltage V
EBO
6.0 6.0 5.0 V
Collector Current — Continuous I
C
100 100 100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
P
D
150 mW
T
A
= 25°C
Thermal Resistance, Junction to Ambient R
θJA
833 °C/W
Total Device Dissipation P
D
2.4 mW/°C
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage BC846 Series 65 — —
(I
C
= 10 mA) BC847 Series V
(BR)CEO
45 — — v
BC848 Series 30 — —
Collector–Emitter Breakdown Voltage BC846 Series 80 — —
(I
C
= 10 µA, V
EB
= 0) BC847 Series V
(BR)CES
50 — — v
BC848 Series 30 — —
Collector–Base Breakdown Voltage BC846 Series 80 — —
(I
C
= 10 µA) BC847 Series V
(BR)CBO
50 — — v
BC848 Series 30 — —
Emitter–Base Breakdown Voltage BC846 Series 6.0 — —
(I
E
= 1.0 µA) BC847 Series, V
(BR)EBO
6.0 — — v
BC848 Series 5.0 — —
Collector Cutoff Current (V
CB
= 30 V)
I
CBO
——15nA
(V
CB
= 30 V, T
A
= 150°C) — — 5.0 µA
BC846AWT1,BWT1
BC847AWT1,BWT1
CWT1
BC848AWT1,BWT1
CWT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 419–02, STYLE 3
SOT–323 /SC–70
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
1.FR–5=1.0 x 0.75 x 0.062in