Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
BC846A,B
1
2
1
2
3
3
SOT-23
Rating Symbol Value Unit
Characteristic
Collector-Emitter Voltage VCEO 65 Vdc
Collector-Base Voltage VCBO 80 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current-Continuous IC 100 mAdc
Characteristic Symbol Max. Unit
Total Device Dissipation FR-5 Board
(1)
TA=25
o
C
Derate above 25
o
C
PD
225
1.8
mW
mW /
o
C
Total Device Dissipation Alumina Substrate,
(2)
TA=25
o
C
Derate above 25
o
C
PD
300
2.4
mW
mW /
o
C
Thermal Resistance Junction to Ambient 556
o
C / W
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
OFF CHARACTERISTICS
R JA
Thermal Resistance Junction to Ambient 417
o
C / WR JA
Junction and Storage Temperature
Collector-Emitter Breakdowe Voltage
( IC=10 uAdc, VEB=0 )
Collector-Base Breakdowe Voltage
( IC=10 uAdc )
Collector-Emitter Breakdowe Voltage
( IC=10mAdc )
Emitter-Base Breakdowe Voltage
( IE=1.0 uA )
Symbol
V(BR)CES
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Min.
80
65
80
6.0
-
-
Max.
-
-
-
-
15
5.0
Typ.
-
-
-
-
-
-
Unit
Vdc
Vdc
Vdc
Vdc
nAdc
uAdc
Collector Cutoff Current
( VCB=30 V )
( VCB=30 V, TA = 150
o
C )
BC846A = 1A,BC846B = 1B
-55 to +150
o
CTJ,TSTG
Zowie Technology CorporationREV. : 0
EMITTER
BASE
COLLECTOR
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.