BC846
器件描述：Surface mount Si-Epitaxial PlanarTransistors
器件厂商：DIOTEC [Diotec Semiconductor]
文件大小：186.57KB，共2页
Sponsor by e络盟器件资料摘要：
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses t
p
= 300 g58s, duty cycle g35 2% – Gemessen mit Impulsen t
p
= 300 g58s, Schaltverhältnis g35 2%
10 01.11.2003
2.
5
ma
x
1.
3
±0
.
1
1.1
2.9
±0.1
0.4
1 2
3
Type
Code
1.9
BC 846 ... BC 850 General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Power dissipation – Verlustleistung 250 mW
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25g47C) Grenzwerte (T
A
= 25g47C)
BC 846 BC 847/850 BC 848/849
Collector-Emitter-voltage B open V
CE0
65 V 45 V 30 V
Collector-Base-voltage E open V
CB0
80 V 50 V 30 V
Emitter-Base-voltage C open V
EB0
6 V 5 V
Power dissipation – Verlustleistung P
tot
250 mW
1
)
Collector current – Kollektorstrom (DC) I
C
100 mA
Peak Collector current – Kollektor-Spitzenstrom I
CM
200 mA
Peak Base current – Basis-Spitzenstrom I
BM
200 mA
Peak Emitter current – Emitter-Spitzenstrom - I
EM
200 mA
Junction temperature – Sperrschichttemperatur T
j
150g47C
Storage temperature – Lagerungstemperatur T
S
- 65…+ 150g47C
Characteristics (T
j
= 25g47C) Kennwerte (T
j
= 25g47C)
Group A Group B Group C
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
V
CE
= 5 V, I
C
= 10 g58Ah
FE
typ. 90 typ. 150 typ. 270
V
CE
= 5 V, I
C
= 2 mA h
FE
110...220 200...450 420...800
h-Parameters at V
CE
= 5V, I
C
= 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
h
fe
typ. 220 typ. 330 typ. 600
Input impedance – Eingangs-Impedanz h
ie
1.6...4.5 kg83 3.2...8.5 kg83 6...15 kg83
Output admittance – Ausgangs-Leitwert h
oe
18 < 30 g58S 30 < 60 g58S 60 < 110 g58S
Reverse voltage transfer ratio
Spannungsrückwirkung
h
re
typ.1.5 *10
-4
typ. 2 *10
-4
typ. 3 *10
-4
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses t
p
= 300 g58s, duty cycle g35 2% – Gemessen mit Impulsen t
p
= 300 g58s, Schaltverhältnis g35 2%
10 01.11.2003
2.
5
ma
x
1.
3
±0
.
1
1.1
2.9
±0.1
0.4
1 2
3
Type
Code
1.9
BC 846 ... BC 850 General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Power dissipation – Verlustleistung 250 mW
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25g47C) Grenzwerte (T
A
= 25g47C)
BC 846 BC 847/850 BC 848/849
Collector-Emitter-voltage B open V
CE0
65 V 45 V 30 V
Collector-Base-voltage E open V
CB0
80 V 50 V 30 V
Emitter-Base-voltage C open V
EB0
6 V 5 V
Power dissipation – Verlustleistung P
tot
250 mW
1
)
Collector current – Kollektorstrom (DC) I
C
100 mA
Peak Collector current – Kollektor-Spitzenstrom I
CM
200 mA
Peak Base current – Basis-Spitzenstrom I
BM
200 mA
Peak Emitter current – Emitter-Spitzenstrom - I
EM
200 mA
Junction temperature – Sperrschichttemperatur T
j
150g47C
Storage temperature – Lagerungstemperatur T
S
- 65…+ 150g47C
Characteristics (T
j
= 25g47C) Kennwerte (T
j
= 25g47C)
Group A Group B Group C
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
V
CE
= 5 V, I
C
= 10 g58Ah
FE
typ. 90 typ. 150 typ. 270
V
CE
= 5 V, I
C
= 2 mA h
FE
110...220 200...450 420...800
h-Parameters at V
CE
= 5V, I
C
= 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
h
fe
typ. 220 typ. 330 typ. 600
Input impedance – Eingangs-Impedanz h
ie
1.6...4.5 kg83 3.2...8.5 kg83 6...15 kg83
Output admittance – Ausgangs-Leitwert h
oe
18 < 30 g58S 30 < 60 g58S 60 < 110 g58S
Reverse voltage transfer ratio
Spannungsrückwirkung
h
re
typ.1.5 *10
-4
typ. 2 *10
-4
typ. 3 *10
-4