NPN EPITAXIAL
BC846/847/848/849/ 850 SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
• Suitable for automatic insertion in thick and thin-film circuits
• LOW NOISE: BC849, BC850
• Complement to BC856 ... BC860
ABSOLUTE MAXIMUM RATINGS (T A =25 °C )
ELECTRICAL CHARACTERISTICS (T A =25 °C )
h FE CLASSIFICATION
MARKING CODE
Characteristic Symbol Rating Unit
Collector Base Voltage
: BC846
: BC847/850
: BC848/849
Collector Emitter Voltage
: BC846
: BC847/850
: BC848/849
Emitter-Base Voltage
: BC846/847
: BC848/849/850
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
V CBO
V CEO
V EBO
I C
P C
T J
T STG
80
50
30
65
45
30
6
5
100
310
150
-65 ~ 150
V
V
V
V
V
V
V
V
mA
mW
°C
°C
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector Cut-off Current
DC Current Gain
Collector Emitter Saturation Voltage
Collector Base Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
Emitter Base Capacitance
Noise Figure : BC846/847/848
: BC849/850
: BC849
: BC850
I CBO
h FE
V CE (sat)
V BE (sat)
V BE (on)
f T
C CBO
C EBO
NF
NF
V CB =30V, I E =0
V CE =5V, I C =2mA
I C =10mA, I B =0.5mA
I C =100mA, I B =5mA
I C =10mA, I B =0.5mA
I C =100mA, I B =5mA
V CE =5V, I C =2mA
V CE =5V, I C =10mA
V CE =5V, I C =10mA
f=100MHz
V CB =10V, f=1MHz
V EB =0.5V, f=1MHz
V CE =5V, I C =200 µA
f=1KHz, R G =2 K Ω
V CE =5V, I C =200 µA
R G =2 K Ω
f=30~15000Hz
110
580
90
200
700
900
660
300
3.5
9
2
1.2
1.4
1.4
15
800
250
600
700
720
6
10
4
4
3
nA
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
dB
dB
dB
Classification A B C
h FE 110-220 200-450 420-800
TYPE 846A 846B 846C 847A 847B 847C 848A 848B 848C 849A 849B 849C 850A 850B 850C
MARK 8AA 8AB 8AC 8BA 8BB 8BC 8CA 8CB 8CC 8DA 8DB 8DC 8EA 8EB 8EC
SOT-23
1. Base 2. Emitter 3. Collector
1999 Fairchild Semiconductor Corporation
Rev. B