BC817UPN
Aug-21-20021
NPN/PNP Silicon Transistor Array
G01 For AF input stages and driver applications
G01 High current gain
G01 Low collector-emitter saturation voltage
G01 Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Tape loading orientation

VPW09197
1
2
3
4
5
6
SC74_Tape
123
456
W1s
Direction of Unreeling
Top View
Marking on SC74 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA07177
6 54
321
C1 B2 E2
C2B1E1
TR1
TR2
Type Marking Pin Configuration Package
BC817UPN 1Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1
SC74
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage V
CEO
45 V
Collector-base voltage V
CBO
50
Emitter-base voltage V
EBO
5
DC collector current I
C
500 mA
Peak collector current I
CM
1 A
Base current I
B
100 mA
Peak base current I
BM
200
Total power dissipation, T
S
= 115 °C
P
tot
330 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01105 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance