BC817W, BC818W
1 Nov-29-2001
NPN Silicon AF Transistors
G01 For general AF applications
G01 High collector current
G01 High current gain
G01 Low collector-emitter saturation voltage
G01 Complementary types: BC807W, BC808W (PNP)
1
3
VSO05561
2
Type Marking Pin Configuration Package
BC817-16W
BC817-25W
BC817-40W
BC818-16W
BC818-25W
BC818-40W
6As
6Bs
6Cs
6Es
6Fs
6Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
Maximum Ratings
Parameter Symbol
BC817W BC818W
Unit
Collector-emitter voltage
V
CEO
45 25 V
Collector-base voltage
V
CBO
50 30
Emitter-base voltage
V
EBO
5 5
DC collector current
I
C
500 mA
Peak collector current
I
CM
1 A
Base current mA100
I
B
Peak base current
I
BM
200
Total power dissipation, T
S
= 130 °C P
tot
250 mW
Junction temperature
T
j
150 °C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G0180 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance