1Motorola Small–Signal Transistors, FETs and Diodes Device Data

C0071C0101C0110C0101C0114C0097C0108 C0080C0117C0114C0112C0111C0115C0101 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
45 V
Collector–Base Voltage V
CBO
50 V
Emitter–Base Voltage V
EBO
5.0 V
Collector Current — Continuous I
C
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board, (1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
C0113JA
556 °C/W
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
C0113JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
V
(BR)CEO
45 — — V
Collector–Emitter Breakdown Voltage
(V
EB
= 0, I
C
= –10 µA)
V
(BR)CES
50 — — V
Emitter–Base Breakdown Voltage
(I
E
= –1.0 C0109A)
V
(BR)EBO
5.0 — — V
Collector Cutoff Current
(V
CB
= 20 V)
(V
CB
= 20 V, T
A
= 150°C)
I
CBO
—
—
—
—
100
5.0
nA
µA
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a registered trademark of the Bergquist Company.
Order this document
by BC817–16LT1/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0067C0056C0049C0055C0045C0049C0054C0076C0084C0049
C0066C0067C0056C0049C0055C0045C0050C0053C0076C0084C0049
C0066C0067C0056C0049C0055C0045C0052C0048C0076C0084C0049
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
 Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER