LESHAN RADIO COMPANY, LTD.
M2–1/2
1
3
2
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
45 V
Collector–Base Voltage V
CBO
50 V
Emitter–Base Voltage V
EBO
5.0 V
Collector Current — Continuous I
C
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
T
A
= 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation P
D
Alumina Substrate, (2) T
A
= 25°C 300 mW
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
–55 to +150 °C
DEVICE MARKING
BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
V
(BR)CEO
45 — — V
Collector–Emitter Breakdown Voltage
(V
EB
= 0, I
C
= –10 µA)
V
(BR)CES
50 — — V
Emitter–Base Breakdown Voltage
(I
E
= –1.0 µA)
V
(BR)EBO
5.0 — — V
Collector Cutoff Current I
CBO
(V
CB
= 20 V) — — 100 nA
(V
CB
= 20 V, T
A
= 150°C) — — 5.0 µA
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BC817-16LT1
BC817-25LT1
BC817-40LT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)