BC817, BC818
1 Nov-29-2001
NPN Silicon AF Transistors
G01 For general AF applications
G01 High collector current
G01 High current gain
G01 Low collector-emitter saturation voltage
G01 Complementary types: BC807, BC808 (PNP)
1
2
3
VPS05161
Type Marking Pin Configuration Package
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
6As
6Bs
6Cs
6Es
6Fs
6Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter Symbol
BC817 BC818
Unit
Collector-emitter voltage
V
CEO
45 25 V
Collector-base voltage
V
CBO
50 30
Emitter-base voltage
V
EBO
5 5
DC collector current
I
C
500 mA
Peak collector current
I
CM
1 A
Base current mA100
I
B
Peak base current
I
BM
200
Total power dissipation, T
S
= 79 °C P
tot
330 mW
Junction temperature
T
j
150 °C
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01215 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance