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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

BC817

器件描述:Small Signal Transistors (NPN)
器件厂商:GE [General Semiconductor]
厂商主页:http://www.vishay.com/
文件大小:227.3KB,共5页
Sponsor by e络盟
器件资料摘要:
FEATURES
Small Signal Transistors (NPN)
Dimensions in inches and (millimeters)
.016 (0.4)
.056 (
1
.43
)
.037(0.95) .037(0.95)
m
a
x
.
.0
04 (
0
.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
3
12
Top View
.102 (2.6)
.0
07 (
0
.175)
.045 (
1
.15)
.118 (3.0)
.052 (
1
.33
)
.
005 (
0
.125)
.094 (2.4)
.037 (
0
.95)

Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C

ambient temperature unless otherwise specified
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
SOT-23
4/98
NPN Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier
applications.
Especially suited for automatic insertion
in thick- and thin-film circuits.
These transistors are subdivided into three groups -16,
-25 and -40 according to their current gain.
As complementary types, the PNP transistors BC807
and BC808 are recommended.
Symbol Value Unit
Collector-Emitter Voltage BC817
BC818
V
CES
V
CES
50
30
V
V
Collector-Emitter Voltage BC817
BC818
V
CEO
V
CEO
45
25
V
V
Emitter-Base Voltage V
EBO
5V
Collector Current I
C
800 mA
Peak Collector Current I
CM
1000 mA
Peak Base Current I
BM
200 mA
Peak Emitter Current –I
EM
1000 mA
Power Dissipation at T
SB
= 50 °C P
tot
310
1)
mW
Junction Temperature T
j
150 °C
Storage Temperature Range T
S
–65 to +150 °C
1)
Device on fiberglass substrate, see layout
Marking code
Type Mar king
BC817-16
-25
-40
BC818-16
-25
-40
6A
6B
6C
6E
6F
6G



BC817, BC818