BC817/ BC818 NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
• Suitable for AF-Driver stages and low power output stages
• Complement to BC807/BC808
ABSOLUTE MAXIMUM RATINGS (T A =25 °C )
ELECTRICAL CHARACTERISTICS (T A =25 °C )
h FE CLASSIFICATION
MARKING CODE
Characteristic Symbol Rating Unit
Collector Emitter Voltage : BC817
: BC818
Collector Emitter Voltage : BC817
: BC818
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
V CES
V CEO
V EBO
I C
P C
T J
T STG
50
30
45
25
5
800
310
150
-65 ~ 150
V
V
V
V
V
mA
mW
°C
°C
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Emitter Breakdown Voltage
: BC817
: BC818
Collector-Emitter Breakdown Voltage
: BC817
: BC818
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector-Base Capacitance
BV CEO
BV CES
BV EBO
I CES
I EBO
h FE 1
h FE 2
V CE (sat)
V BE (on)
f T
C CBO
I C =10mA, I B =0
I C =0.1mA, I B =0
I E =0.1mA, I C =0
V CE =25V, I B =0
V EB =4V, I C =0
V CE =1V, I C =100mA
V CE =1V, I C =300mA
I C =500mA, I B =50mA
V CE =1V, I C =300mA
V CE =5V, I C =10mA
f=50MHz
V CB =10V, f=1MHz
45
25
50
30
5
100
60
100
100
100
630
0.7
1.2
12
V
V
V
V
V
nA
nA
V
V
MHz
pF
Classification 16 25 40
h FE 1 100-250 160-400 250-630
h FE 2 60- 100- 170-
TYPE 817-16 817-25 817-40 818-16 818-25 818-40
MARKING 8FA 8FB 8FC 8GA 8GB 8GC
SOT-23
1. Base 2. Emitter 3. Collector
1999 Fairchild Semiconductor Corporation
Rev. B