BC817
器件描述：NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
器件厂商：DIODES [Diodes Incorporated]
文件大小：57.97KB，共3页
Sponsor by e络盟器件资料摘要：
DS11107 Rev. 9 - 2 1 of 3 BC817-16/-25/-40
BC817-16 / -25 / -40
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Notes: 1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm
2
area.
2. Short duration pulse test used to minimize self-heating effect.
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC 800 mA
Peak Collector Current ICM 1000 mA
Peak Emitter Current IEM 1000 mA
Power Dissipation at T
SB
= 50°C (Note 1) P
d 310 mW
Thermal Resistance, Junction to Substrate Backside (Note 1) Rc113SB 320 °C/W
Thermal Resistance, Junction to Ambient Air (Note 1) Rc113JA 403 °C/W
Operating and Storage Temperature Range Tj,TSTG -65 to +150 °C
c183 Ideally Suited for Automatic Insertion
c183 Epitaxial Planar Die Construction
c183 For Switching, AF Driver and Amplifier
Applications
c183 Complementary PNP Types Available (BC807)
c183 Case: SOT-23, Molded Plastic
c183 Case material - UL Flammability Rating
Classification 94V-0
c183 Moisture sensitivity: Level 1 per J-STD-020A
c183 Terminals: Solderable per MIL-STD-202, Method
208
c183 Pin Connections: See Diagram
c183 Marking (See Page 3): BC817-16 6A, K6A
BC817-25 6B, K6B
BC817-40 6C, K6C
c183 Ordering & Date Code Information: See Page 3
c183 Approx. Weight: 0.008 grams
Mechanical Data
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic (Note 2) Symbol Min Max Unit Test Condition
DC Current Gain Current Gain Group -16
-25
-40
Current Gain Group -16
-25
-40
h
FE
100
160
250
60
100
170
250
400
600
—
—
—
—
V
CE
= 1.0V, I
C
= 100mA
V
CE
= 1.0V, I
C
= 300mA
Collector-Emitter Saturation Voltage VCE(SAT) — 0.7 V IC = 500mA, IB = 50mA
Base-Emitter Voltage VBE — 1.2 V VCE = 1.0V, IC = 300mA
Collector-Emitter Cutoff Current ICES —
100
5.0
nA
µA
V
CE
= 45V
V
CE
= 25V, T
j
= 150°C
Emitter-Base Cutoff Current IEBO — 100 nA VEB = 4.0V
Gain Bandwidth Product fT 100 — MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 50MHz
Collector-Base Capacitance CCBO —12pFVCB = 10V, f = 1.0MHz
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.85 0.80
c97 0c176 8c176
All Dimensions in mm
A
E
J
L
TOP VIEW
M
B C
H
G
D
K
C
B E
BC817-16 / -25 / -40
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Notes: 1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm
2
area.
2. Short duration pulse test used to minimize self-heating effect.
Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC 800 mA
Peak Collector Current ICM 1000 mA
Peak Emitter Current IEM 1000 mA
Power Dissipation at T
SB
= 50°C (Note 1) P
d 310 mW
Thermal Resistance, Junction to Substrate Backside (Note 1) Rc113SB 320 °C/W
Thermal Resistance, Junction to Ambient Air (Note 1) Rc113JA 403 °C/W
Operating and Storage Temperature Range Tj,TSTG -65 to +150 °C
c183 Ideally Suited for Automatic Insertion
c183 Epitaxial Planar Die Construction
c183 For Switching, AF Driver and Amplifier
Applications
c183 Complementary PNP Types Available (BC807)
c183 Case: SOT-23, Molded Plastic
c183 Case material - UL Flammability Rating
Classification 94V-0
c183 Moisture sensitivity: Level 1 per J-STD-020A
c183 Terminals: Solderable per MIL-STD-202, Method
208
c183 Pin Connections: See Diagram
c183 Marking (See Page 3): BC817-16 6A, K6A
BC817-25 6B, K6B
BC817-40 6C, K6C
c183 Ordering & Date Code Information: See Page 3
c183 Approx. Weight: 0.008 grams
Mechanical Data
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic (Note 2) Symbol Min Max Unit Test Condition
DC Current Gain Current Gain Group -16
-25
-40
Current Gain Group -16
-25
-40
h
FE
100
160
250
60
100
170
250
400
600
—
—
—
—
V
CE
= 1.0V, I
C
= 100mA
V
CE
= 1.0V, I
C
= 300mA
Collector-Emitter Saturation Voltage VCE(SAT) — 0.7 V IC = 500mA, IB = 50mA
Base-Emitter Voltage VBE — 1.2 V VCE = 1.0V, IC = 300mA
Collector-Emitter Cutoff Current ICES —
100
5.0
nA
µA
V
CE
= 45V
V
CE
= 25V, T
j
= 150°C
Emitter-Base Cutoff Current IEBO — 100 nA VEB = 4.0V
Gain Bandwidth Product fT 100 — MHz
V
CE
= 5.0V, I
C
= 10mA,
f = 50MHz
Collector-Base Capacitance CCBO —12pFVCB = 10V, f = 1.0MHz
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.85 0.80
c97 0c176 8c176
All Dimensions in mm
A
E
J
L
TOP VIEW
M
B C
H
G
D
K
C
B E