SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 – MARCH 2001 ✪
PARTMARKING DETAILS
BC81716 – 6AZ
BC81725 – 6BZ
BC81740 – 6CZ
COMPLEMENTARY TYPE – BC807
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
50 V
Collector-Emitter Voltage V
CEO
45 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
1A
Continuous Collector Current I
C
500 mA
Base Current I
B
100 mA
Peak Base Current I
BM
200 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
I
CBO
0.1
5
µA
µA
V
CB
=20V, I
E
=0
V
CB
=20V, I
E
=0, T
amb
=150°C
Emitter Cut-Off Current I
EBO
10 µA V
EB
=5V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
700 mV I
C
=500mA, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(on)
1.2 V I
C
=500mA, V
CE
=1V*
Static Forward Current
Transfer Ratio
h
FE
BC81716 100 250 I
C
=100mA, V
CE
=1V*
BC81725 160 400 I
C
=100mA, V
CE
=1V*
BC81740 250 600 I
C
=100mA, V
CE
=1V*
All bands 40 I
C
=500mA, V
CE
=1V*
Transition Frequency f
T
200 MHz I
C
=10mA, V
CE
=5V
f=35MHz
Output Capacitance C
obo
5.0 pF V
CB
=10V, f=1MHz
*Measured under pulsed conditions.
BC817
C
B
E
SOT23
TBA