BC807U
Nov-29-20011
PNP Silicon Transistor Array
G01 For AF input stages and driver applications
G01 High current gain
G01 Low collector-emitter saturation voltage
G01 Two ( galvanic) internal isolated Transistors
with good matching in one package
VPW09197
1
2
3
4
5
6
EHA07175
6 54
321
C1 B2 E2
C2B1E1
TR1
TR2
Type Marking Pin Configuration Package
BC807U 5Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1
SC74
Maximum Ratings
Parameter ValueSymbol Unit
Collector-emitter voltage V
V
CEO
45
Collector-base voltage
V
CBO
50
V
EBO
5Emitter-base voltage
DC collector current
I
C
500 mA
Peak collector current A1
I
CM
I
B
100Base current mA
Peak base current
I
BM
200
Total power dissipation, T
S
= 115 °C
P
tot
330 mW
Junction temperature
T
j
°C150
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01105 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance