BC807W, BC808W
Nov-29-20011
PNP Silicon AF Transistors
G01 For general AF applications
G01 High collector current
G01 High current gain
G01 Low collector-emitter saturation voltage
G01 Complementary types: BC817W, BC818W (NPN)
1
3
VSO05561
2
Type Marking Pin Configuration Package
BC807-16W
BC807-25W
BC807-40W
BC808-16W
BC808-25W
BC808-40W
5As
5Bs
5Cs
5Es
5Fs
5Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
Maximum Ratings
Parameter Symbol UnitBC 808WBC 807W
45Collector-emitter voltage 25V
CEO
V
Collector-base voltage V
CBO
50 30
Emitter-base voltage V
EBO
5 5
DC collector current I
C
500 mA
Peak collector current I
CM
A1
Base current mA100I
B
200I
BM
Peak base current
Total power dissipation, T
S
= 130 °C mW250P
tot
150T
j
Junction temperature °C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G0180 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance