BC807, BC808
1 Nov-29-2001
PNP Silicon AF Transistors
G01 For general AF applications
G01 High collector current
G01 High current gain
G01 Low collector-emitter saturation voltage
G01 Comlementary types: BC817, BC818 (NPN)
1
2
3
VPS05161
Type Marking Pin Configuration Package
BC807-16
BC807-25
BC807-40
BC808-16
BC808-25
BC808-40
5As
5Bs
5Cs
5Es
5Fs
5Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter Symbol
BC807 BC808
Unit
Collector-emitter voltage
V
CEO
45 25 V
Collector-base voltage
V
CBO
50 30
Emitter-base voltage
V
EBO
5 5
mADC collector current 500
I
C
Peak collector current 1 A
I
CM
Base current mA100
I
B
Peak base current 200
I
BM
Total power dissipation, T
S
= 79 °C P
tot
mW330
Junction temperature 150 °C
T
j
T
stg
Storage temperature -65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
G01215 K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance