FEATURES
Small Signal Transistors (PNP)
Dimensions in inches and (millimeters)
.016 (0.4)
.056 (
1
.43
)
.037(0.95) .037(0.95)
ma
x
.
.004
(
0
.1
)
.122 (3.1)
.016 (0.4) .016 (0.4)
3
12
Top View
.102 (2.6)
.007 (
0
.17
5
)
.0
45 (
1
.15)
.118 (3.0)
.052 (
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37 (
0
.95)

Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C

ambient temperature unless otherwise specified
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
SOT-23
4/98
BC807, BC808
PNP Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier
applications.
Especially suited for automatic insertion
in thick- and thin-film circuits.
These transistors are subdivided into three groups -16,
-25 and -40 according to their current gain.
As complementary types, the NPN transistors BC817
and BC818 are recommended.
Symbol Value Unit
Collector-Emitter Voltage BC807
BC808
–V
CES
–V
CES
50
30
V
V
Collector-Emitter Voltage BC807
BC808
–V
CEO
–V
CEO
45
25
V
V
Emitter-Base Voltage –V
EBO
5V
Collector Current –I
C
500 mA
Peak Collector Current –I
CM
1000 mA
Peak Base Current –I
BM
200 mA
Peak Emitter Current I
EM
1000 mA
Power Dissipation at T
SB
= 50 °C P
tot
310
1)
mW
Junction Temperature T
j
150 °C
Storage Temperature Range T
S
–65 to +150 °C
1)
Device on fiberglass substrate, see layout
Marking code
Type M ar ki ng
BC807-16
-25
-40
BC808-16
-25
-40
5A
5B
5C
5E
5F
5G
♦
♦
♦
♦