2000. 10. 2 1/1
SEMICONDUCTOR
TECHNICAL DATA
BC638
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
HIGH CURRENT TRANSISTORS.
FEATURES
Complementary to BC637.
MAXIMUM RATING (Ta=251)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
A
J
K
G
H
F F
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=251)
* Pulse Test : Pulse Width*300ÌS, Duty Cycle 2.0%
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current I
CBO
V
CB
=-30V, I
E
=0 - - -100 nA
Collector-Emitter Breakdown Voltage * V
(BR)CEO
I
C
=-10mA, I
B
=0 -60 - - V
Collector-Base Breakdown Voltage V
(BR)CBO
I
C
=-100ÌA, I
E
=0 -60 - - V
Emitter-Base Breakdown Voltage V
(BR)EBO
I
E
=-10ÌA, I
C
=0 -5.0 - - V
DC Current Gain h
FE
V
CE
=-2V, I
C
=-150mA -40 - 160
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
=-500mA, I
B
=-50mA - - -0.5 V
Base-Emitter Voltage V
BE
V
CE
=-2V, I
C
=-500mA - - -1.0 V
Transition Frequency f
T
V
CE
=-2V, I
C
=-50mA, f=100MHz - 150 - MHz
Input Capacitance C
ib
V
EB
=-0.5V, I
C
=0, f=1MHz - 50 - pF
Collector Output Capacitance C
ob
V
CB
=-10V, I
E
=0, f=1MHz - 9.0 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage V
CBO
-60 V
Collector-Emitter Voltage V
CEO
-60 V
Emitter-Base Voltage V
EBO
-5 V
Collector Current I
C
-500 mA
Collector Power Dissipation P
C
625 mW
Junction Temperature T
j
1501
Storage Temperature T
stg -551501