BC636/638/ 640 PNP EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
• Complement to BC635/637/639
ABSOLUTE MAXIMUM RATINGS (T A =25 °C )
ELECTRICAL CHARACTERISTICS (T A =25 °C )
Characteristic Symbol Rating Unit
Collector Emitter Voltage : BC636
at R BE =1Kohm : BC638
: BC640
Collector Emitter Voltage : BC636
: BC638
: BC640
Collector Emitter Voltage : BC636
: BC638
: BC640
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
V CER
V CES
V CEO
V EBO
I C
I CP
I B
P C
T J
T STG
-45
-60
-100
-45
-60
-100
-45
-60
-80
-5
-1
-1.5
-100
1
150
-65 ~ 150
V
V
V
V
V
V
V
V
V
V
A
A
mA
W
°C
°C
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Emitter Breakdown Voltage
: BC636
: BC638
: BC640
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: BC635
: BC637/BC639
Collector Emitter Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
BV CEO
I CBO
I EBO
h FE
V CE (sat)
V BE (on)
f T
I C = -10mA, I B =0
V CB = -30V, I E =0
V EB = -5V, I C =0
V CE = -2V, I C = -5mA
V CE = -2V, I C = -150mA
V CE = -2V, I C = -500mA
I C = -500mA, I B = -50mA
V CE = -2V, I C = -500mA
V CE = -5V, I C = -10mA, f=50MHz
-45
-60
-80
25
40
40
25
100
-0.1
-0.1
250
160
-0.5
-1
V
V
V
µA
µA
V
V
MHz
TO-92
1. Emitter 2. Collector 3. Base
1999 Fairchild Semiconductor Corporation
Rev. B