BC617
器件描述：NPN Silicon Darlington Transistors (High current gain High collector current)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：142.29KB，共5页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1
BC 617
BC 618
NPN Silicon Darlington Transistors BC 617
BC 618
5.91
Maximum Ratings
Type Marking Package
1)
Pin Configuration
BC 617
BC 618
Q62702-C1137
Q62702-C1138
– TO-92
1 2 3
Ordering Code
C B E
1)
For detailed information see chapter Package Outlines.
2)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Parameter Symbol
BC 617 Unit
Collector-emitter voltage VCE0 40 V
Collector-base voltage VCB0 50
Emitter-base voltage VEB0
Collector current IC mA
Base current IB
Total power dissipation, TC = 66 ˚C Ptot mW
Junction temperature Tj ˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient Rth JA ≤ 200 K/W
Peak collector current ICM
Junction - case
2)
Rth JC ≤ 135
Peak base current IBM
BC 618
55
80
12
500
100
625
150
800
200
Values
a71 High current gain
a71 High collector current
1
2
3
BC 617
BC 618
NPN Silicon Darlington Transistors BC 617
BC 618
5.91
Maximum Ratings
Type Marking Package
1)
Pin Configuration
BC 617
BC 618
Q62702-C1137
Q62702-C1138
– TO-92
1 2 3
Ordering Code
C B E
1)
For detailed information see chapter Package Outlines.
2)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Parameter Symbol
BC 617 Unit
Collector-emitter voltage VCE0 40 V
Collector-base voltage VCB0 50
Emitter-base voltage VEB0
Collector current IC mA
Base current IB
Total power dissipation, TC = 66 ˚C Ptot mW
Junction temperature Tj ˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient Rth JA ≤ 200 K/W
Peak collector current ICM
Junction - case
2)
Rth JC ≤ 135
Peak base current IBM
BC 618
55
80
12
500
100
625
150
800
200
Values
a71 High current gain
a71 High collector current
1
2
3