1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
8 01.11.2003
BC 556 ... BC 559 General Purpose Transistors
PNP Si-Epitaxial PlanarTransistors PNP
Power dissipation – Verlustleistung 500 mW
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A
= 25g47C) Grenzwerte (T
A
= 25g47C)
BC 556 BC 557 BC 558/559
Collector-Emitter-voltage B open - V
CE0
65 V 45 V 30 V
Collector-Base-voltage E open - V
CB0
80 V 50 V 30 V
Emitter-Base-voltage C open - V
EB0
5 V
Power dissipation – Verlustleistung P
tot
500 mW
1
)
Collector current – Kollektorstrom (DC) - I
C
100 mA
Junction temp. – Sperrschichttemperatur T
j
150g47C
Storage temperature – Lagerungstemperatur T
S
- 55…+ 150g47C
Characteristics (T
j
= 25g47C) Kennwerte (T
j
= 25g47C)
Group A Group B Group C
DC current gain – Kollektor-Basis-Stromverhältnis
- V
CE
= 5 V, - I
C
= 2 mA h
FE
110...220 200...460 420...800
h-Parameters at - V
CE
= 5V, - I
C
= 2 mA, f = 1 kHz
Small signal current gain
Stromverstärkung
h
fe
typ. 220 typ. 330 typ. 600
Input impedance – Eingangsimpedanz h
ie
1.6...4.5 kg83 3.2...8.5 kg83 6...15 kg83
Output admittance – Ausg.-Leitwert h
oe
18 < 30 g58S 30 < 60 g58S 60 < 110 g58S
Reverse voltage transfer ratio
Spannungsrückwirkung
h
re
typ.1.5 *10
-4
typ. 2 *10
-4
typ. 3 *10
-4
Collector saturation voltage – Kollektor-Sättigungsspg.
- I
C
= 100 mA, - I
B
= 5 mA -V
CEsat
– – 300 mV