©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC556/
557/
558
/559
/56
0
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a
=25°C unless otherwise noted
Electrical Characteristics T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BC556
: BC557/560
: BC558/559
-80
-50
-30
V
V
V
V
CEO
Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559
-65
-45
-30
V
V
V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current (DC) -100 mA
P
C
Collector Power Dissipation 500 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
= -30V, I
E
=0 -15 nA
h
FE
DC Current Gain V
CE
= -5V, I
C
=2mA 110 800
V
CE
(sat)
Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
-90
-250
-300
-650
mV
mV
V
BE
(sat) Collector-Base Saturation Voltage I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
-700
-900
mV
mV
V
BE
(on) Base-Emitter On Voltage

V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA
-600 -660 -750
-800
mV
mV
f
T
Current Gain Bandwidth Product V
CE
= -5V, I
C
= -10mA, f=10MHz 150 MHz
C
ob
Output Capacitance V
CB
= -10V, I
E
=0, f=1MHz 6 pF
NF Noise Figure : BC556/557/558
: BC559/560
: BC559
: BC560
V
CE
= -5V, I
C
= -200µA
f=1KHz, R
G
=2KΩ
V
CE
= -5V, I
C
= -200µA
R
G
=2KΩ, f=30~15000MHz
2
1
1.2
1.2
10
4
4
2
dB
dB
dB
dB
Classification A B C
h
FE
110 ~ 220 200 ~ 450 420 ~ 800
BC556/557/558/559/560
Switching and Amplifier
• High Voltage: BC556, V
CEO
= -65V
• Low Noise: BC559, BC560
• Complement to BC546 ... BC 550
1. Collector 2. Base 3. Emitter
TO-92
1