1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0065C0109C0112C0108C0105C0102C0105C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
PNP Silicon
MAXIMUM RATINGS
Rating Symbol
BC
556
BC
557
BC
558 Unit
Collector–Emitter Voltage V
CEO
–65 –45 –30 Vdc
Collector–Base Voltage V
CBO
–80 –50 –30 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–100 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
200 °C/W
Thermal Resistance, Junction to Case R
C0113JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –2.0 mAdc, I
B
= 0) BC556
BC557
BC558
V
(BR)CEO
–65
–45
–30
—
—
—
—
—
—
V
Collector–Base Breakdown Voltage
(I
C
= –100 µAdc) BC556
BC557
BC558
V
(BR)CBO
–80
–50
–30
—
—
—
—
—
—
V
Emitter–Base Breakdown Voltage
(I
E
= –100 C0109Adc, I
C
= 0) BC556
BC557
BC558
V
(BR)EBO
–5.0
–5.0
–5.0
—
—
—
—
—
—
V
Collector–Emitter Leakage Current
(V
CES
= –40 V) BC556
(V
CES
= –20 V) BC557
BC558
(V
CES
= –20 V, T
A
= 125°C) BC556
BC557
BC558
I
CES
—
—
—
—
—
—
–2.0
–2.0
–2.0
—
—
—
–100
–100
–100
–4.0
–4.0
–4.0
nA
µA
Order this document
by BC556/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0067C0053C0053C0054C0044C0066
C0066C0067C0053C0053C0055C0065C0044C0066C0044C0067
C0066C0067C0053C0053C0056C0066
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
 Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER