1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0076C0111C0119 C0078C0111C0105C0115C0101 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
NPN Silicon
MAXIMUM RATINGS
Rating Symbol BC549 BC550 Unit
Collector–Emitter Voltage V
CEO
30 45 Vdc
Collector–Base Voltage V
CBO
30 50 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
100 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
200 °C/W
Thermal Resistance, Junction to Case R
C0113JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0) BC549B,C
BC550B,C
V
(BR)CEO
30
45
—
—
—
—
Vdc
Collector–Base Breakdown Voltage
(I
C
= 10 µAdc, I
E
= 0) BC549B,C
BC550B,C
V
(BR)CBO
30
50
—
—
—
—
Vdc
Emitter–Base Breakdown Voltage
(I
E
= 10 C0109Adc, I
C
= 0)
V
(BR)EBO
5.0 — — Vdc
Collector Cutoff Current
(V
CB
= 30 V, I
E
= 0)
(V
CB
= 30 V, I
E
= 0, T
A
= +125°C)
I
CBO
—
—
—
—
15
5.0
nAdc
µAdc
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
I
EBO
— — 15 nAdc
Order this document
by BC549B/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0067C0053C0052C0057C0066C0044C0067
C0066C0067C0053C0053C0048C0066C0044C0067
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
 Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER