©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
BC516
TO-92
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Electrical Characteristics T
A
=25°C unless otherwise noted
NOTES:
1. Pulse Test Pulse Width ≤ 2%
2. f
T
= Ih
fe
I · f
test
Thermal Characteristics T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 30 V
V
CBO
Collector-Base Voltage 40 V
V
EBO
Emitter-Base Voltage 10 V
I
C
Collector Current - Continuous 1 A
P
D
Total Power Dissipation T
A
= 25°C625mW
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ +150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
Collector-Emitter Breakdown Voltage I
C
= 2mA, I
B
= 0 30 V
V
CBO
Collector-Base Breakdown Voltage I
C
= 100µA, I
E
= 0 40 V
V
EBO
Emitter-Base Breakdown Voltage I
E
= 10µA, I
C
= 0 10 V
I
CBO
Collector Cutoff Current V
CB
= 30V, I
E
= 0 100 nA
h
FE
DC Current Gain I
C
= 20mA, V
CE
= 2V 30,00
0
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 100mA, I
B
= 0.1mA 1 V
V
BE
(on) Base-Emitter On Voltage I
C
= 10mA, V
CE
= 5V 1.4 V
f
T
Current Gain Bandwidth Product (2) I
C
= 10mA, V
CE
= 5V, f = 100MHz 200 MHZ
Symbol Parameter Max. Units
R
θJA
Thermal Resistance, Junction to Ambient 200 °C/W
R
θJC
Thermal Resistance, Junction to Case 83.3 °C/W
BC516
PNP Darlington Transistor
• This device is designed for applications reguiring extremely high
current gain at currents to 1mA.
• Sourced from process 61.
1. Collector 2. Base 3. Emitter
1