BC516
器件描述：PNP Silicon Darlington Transistor (High current gain High collector current)
器件厂商：SIEMENS [Siemens Semiconductor Group]
文件大小：138.8KB，共4页
Sponsor by e络盟器件资料摘要：
Semiconductor Group 1
PNP Silicon Darlington Transistor BC 516
5.91
Maximum Ratings
Type Ordering CodeMarking Package
1)
Pin Configuration
BC 516 Q62702-C944– TO-92
1 2 3
C B E
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 30 V
Peak collector current ICM 800
Base current IB 100
Collector current IC 500 mA
Junction temperature Tj 150 ˚C
Total power dissipation, TC = 66 ˚C Ptot 625 mW
Storage temperature range Tstg – 65 … + 150
Collector-base voltage VCB0 40
Thermal Resistance
Junction - ambient Rth JA ≤ 200 K/W
Emitter-base voltage VEB0 10
Peak base current IBM 200
Junction - case
2)
Rth JC ≤ 135
1)
For detailed information see chapter Package Outlines.
2)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
a71 High current gain
a71 High collector current
a71 Complementary type: BC 517 (NPN)
1
2
3
PNP Silicon Darlington Transistor BC 516
5.91
Maximum Ratings
Type Ordering CodeMarking Package
1)
Pin Configuration
BC 516 Q62702-C944– TO-92
1 2 3
C B E
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 30 V
Peak collector current ICM 800
Base current IB 100
Collector current IC 500 mA
Junction temperature Tj 150 ˚C
Total power dissipation, TC = 66 ˚C Ptot 625 mW
Storage temperature range Tstg – 65 … + 150
Collector-base voltage VCB0 40
Thermal Resistance
Junction - ambient Rth JA ≤ 200 K/W
Emitter-base voltage VEB0 10
Peak base current IBM 200
Junction - case
2)
Rth JC ≤ 135
1)
For detailed information see chapter Package Outlines.
2)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
a71 High current gain
a71 High collector current
a71 Complementary type: BC 517 (NPN)
1
2
3