1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0072C0105C0103C0104 C0067C0117C0114C0114C0101C0110C0116 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–80 Vdc
Collector–Base Voltage V
CBO
–80 Vdc
Emitter–Base Voltage V
EBO
–4.0 Vdc
Collector Current — Continuous I
C
–0.5 Adc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
200 °C/W
Thermal Resistance, Junction to Case R
C0113JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= –10 mAdc, I
B
= 0)
V
(BR)CEO
–80 — — Vdc
Collector–Base Breakdown Voltage
(I
C
= –100 C0109Adc, I
E
= 0)
V
(BR)CBO
–80 — — Vdc
Emitter–Base Breakdown Voltage
(I
E
= –10 C0109Adc, I
C
= 0)
V
(BR)EBO
–4.0 — — Vdc
Collector Cutoff Current
(V
CB
= –60 Vdc, I
E
= 0)
I
CBO
— — –100 nAdc
ON CHARACTERISTICS*
DC Current Gain
(I
C
= –10 mAdc, V
CE
= –2.0 Vdc)
(I
C
= –100 mAdc, V
CE
= –2.0 Vdc) BC490
BC490A
(I
C
= –1.0 Adc, V
CE
= –5.0 Vdc)
h
FE
40
60
100
15
—
—
140
—
—
400
250
—
—
1. Pulse Test: Pulse Width = 300 C0109s, Duty Cycle 2%.
Order this document
by BC490/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0067C0052C0057C0048C0044C0065
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
 Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER