1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0072C0105C0103C0104 C0086C0111C0108C0116C0097C0103C0101
C0068C0097C0114C0108C0105C0110C0103C0116C0111C0110 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
NPN Silicon
MAXIMUM RATINGS
Rating Symbol BC372 BC373 Unit
Collector–Emitter Voltage V
CES
100 80 Vdc
Collector–Base Voltage V
CBO
100 80 Vdc
Emitter–Base Voltage V
EBO
12 Vdc
Collector Current — Continuous I
C
1.0 Adc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
200 °C/W
Thermal Resistance, Junction to Case R
C0113JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= 100 C0109Adc, I
B
= 0) BC372
BC373
V
(BR)CES
100
80
—
—
—
—
Vdc
Collector–Base Breakdown Voltage
(I
C
= 100 C0109Adc, I
E
= 0) BC372
BC373
V
(BR)CBO
100
80
—
—
—
—
Vdc
Emitter–Base Breakdown Voltage
(I
E
= 10 C0109Adc, I
C
= 0)
V
(BR)EBO
12 — — Vdc
Collector Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0) BC372
(V
CB
= 60 Vdc, I
E
= 0) BC373
I
CBO
—
—
—
—
100
100
nAdc
Emitter Cutoff Current
(V
EB
= 10 V, I
C
= 0)
I
EBO
— — 100 nAdc
1. Pulse Test: Pulse Width = 300 C0109s, Duty Cycle 2.0%.
Order this document
by BC372/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0067C0051C0055C0050
C0066C0067C0051C0055C0051
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
 Motorola, Inc. 1996
COLLECTOR 3
BASE
2
EMITTER 1