Semiconductor Group 1
PNP Silicon AF Transistor BC 369
5.91
Maximum Ratings
Type Ordering CodeMarking Package
1)
Pin Configuration
BC 369 C62702-C748– TO-92
1 2 3
E C B
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 20 V
Peak collector current ICM 2
Base current IB 100 mA
Collector current IC 1A
Junction temperature Tj 150 ˚C
Total power dissipation, TC = 90 ˚C
2)
Ptot 0.8 (1) W
Storage temperature range Tstg – 65 … + 150
Collector-base voltage VCB0 25
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 156 K/W
Emitter-base voltage VEB0 5
Peak base current IBM 200
Junction - case
3)
Rth JC ≤ 75
1)
For detailed information see chapter Package Outlines.
2)
If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
3)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
a71 High current gain
a71 High collector current
a71 Low collector-emitter saturation voltage
a71 Complementary type: BC 368 (NPN)
1
2
3