1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0065C0109C0112C0108C0105C0102C0105C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
20 Vdc
Collector–Emitter Voltage V
CES
25 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
1.0 Adc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
200 °C/W
Thermal Resistance, Junction to Case R
C0113JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA, I
B
= 0)
V
(BR)CEO
20 — — Vdc
Collector–Base Breakdown Voltage
(I
C
= 100 µA, I
E
= 0 )
V
(BR)CBO
25 — — Vdc
Emitter–Base Breakdown Voltage
(I
E
= 100 µA, I
C
= 0)
V
(BR)EBO
5.0 — — Vdc
Collector Cutoff Current
(V
CB
= 25 V, I
E
= 0)
(V
CB
= 25 V, I
E
= 0, T
J
= 150°C)
I
CBO
—
—
—
—
10
1.0
µAdc
mAdc
Emitter Cutoff Current
(V
EB
= 5.0 V, I
C
= 0)
I
EBO
— — 10 µAdc
ON CHARACTERISTICS
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
(V
CE
= 1.0 V, I
C
= 0.5 A)
(V
CE
= 1.0 V, I
C
= 1.0 A)
h
FE
50
85
60
—
—
—
—
375
—
—
Bandwidth Product (I
C
= 10 mA, V
CE
= 5.0 V, f = 20 MHz) f
T
65 — — MHz
Collector–Emitter Saturation Voltage (I
C
= 1.0 A, I
B
= 100 mA) V
CE(sat)
— — 0.5 V
Base–Emitter On Voltage (I
C
= 1.0 A, V
CE
= 1.0 V) V
BE(on)
— — 1.0 V
Order this document
by BC368/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0078C0080C0078
C0066C0067C0051C0054C0056
C0080C0078C0080
C0066C0067C0051C0054C0057
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
1
2
3
Voltage and current are negative
for PNP transistors
 Motorola, Inc. 1996
COLLECTOR
2
3
BASE
1
EMITTER
COLLECTOR
2
3
BASE
1
EMITTER
NPN PNP