BC337
器件描述：Amplifier Transistors(NPN Silicon)
器件厂商：ONSEMI [ON Semiconductor]
文件大小：119.24KB，共4页
Sponsor by e络盟器件资料摘要：
1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0065C0109C0112C0108C0105C0102C0105C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
NPN Silicon
MAXIMUM RATINGS
Rating Symbol BC337 BC338 Unit
Collector–Emitter Voltage V
CEO
45 25 Vdc
Collector–Base Voltage V
CBO
50 30 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
800 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
200 °C/W
Thermal Resistance, Junction to Case R
C0113JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA, I
B
= 0) BC337
BC338
V
(BR)CEO
45
25
—
—
—
—
Vdc
Collector–Emitter Breakdown Voltage
(I
C
= 100 µA, I
E
= 0) BC337
BC338
V
(BR)CES
50
30
—
—
—
—
Vdc
Emitter–Base Breakdown Voltage
(I
E
= 10 C0109A, I
C
= 0)
V
(BR)EBO
5.0 — — Vdc
Collector Cutoff Current
(V
CB
= 30 V, I
E
= 0) BC337
(V
CB
= 20 V, I
E
= 0) BC338
I
CBO
—
—
—
—
100
100
nAdc
Collector Cutoff Current
(V
CE
= 45 V, V
BE
= 0) BC337
(V
CE
= 25 V, V
BE
= 0) BC338
I
CES
—
—
—
—
100
100
nAdc
Emitter Cutoff Current
(V
EB
= 4.0 V, I
C
= 0)
I
EBO
— — 100 nAdc
Order this document
by BC337/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0067C0051C0051C0055C0044C0045C0049C0054C0044C0045C0050C0053C0044C0045C0052C0048
C0066C0067C0051C0051C0056C0044C0045C0049C0054C0044C0045C0050C0053C0044C0045C0052C0048
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
C0065C0109C0112C0108C0105C0102C0105C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
NPN Silicon
MAXIMUM RATINGS
Rating Symbol BC337 BC338 Unit
Collector–Emitter Voltage V
CEO
45 25 Vdc
Collector–Base Voltage V
CBO
50 30 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
800 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
200 °C/W
Thermal Resistance, Junction to Case R
C0113JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA, I
B
= 0) BC337
BC338
V
(BR)CEO
45
25
—
—
—
—
Vdc
Collector–Emitter Breakdown Voltage
(I
C
= 100 µA, I
E
= 0) BC337
BC338
V
(BR)CES
50
30
—
—
—
—
Vdc
Emitter–Base Breakdown Voltage
(I
E
= 10 C0109A, I
C
= 0)
V
(BR)EBO
5.0 — — Vdc
Collector Cutoff Current
(V
CB
= 30 V, I
E
= 0) BC337
(V
CB
= 20 V, I
E
= 0) BC338
I
CBO
—
—
—
—
100
100
nAdc
Collector Cutoff Current
(V
CE
= 45 V, V
BE
= 0) BC337
(V
CE
= 25 V, V
BE
= 0) BC338
I
CES
—
—
—
—
100
100
nAdc
Emitter Cutoff Current
(V
EB
= 4.0 V, I
C
= 0)
I
EBO
— — 100 nAdc
Order this document
by BC337/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0067C0051C0051C0055C0044C0045C0049C0054C0044C0045C0050C0053C0044C0045C0052C0048
C0066C0067C0051C0051C0056C0044C0045C0049C0054C0044C0045C0050C0053C0044C0045C0052C0048
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER