©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
BC327A Rev. A
BC
3
2
7
A
PNP
Epit
ax
ial
Sili
con T
r
ansi
st
or
BC327A
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
Absolute Maximum Ratings * T
a
= 25°C unless otherwise noted
Electrical Characteristics T
a
= 25°C unless otherwise noted
Symbol Parameter Value Units
V
CES
Collector-Emitter Voltage -60 V
V
CEO
Collector-Emitter Voltage -60 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current (DC) -800 mA
P
C
Collector Power Dissipation 625 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -10mA, I
B
=0 -60 V
BV
CES
Collector-Emitter Breakdown Voltage I
C
= -100µA, V
BE
=0 -60 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -100µA, I
C
=0 -5 V
I
CES
Collector Cut-off Current V
CE
= -45V, V
BE
=0 -100 nA
h
FE1
h
FE2
DC Current Gain V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -500mA
100
40
400
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -500mA, I
B
= -50mA -0.7 V
V
BE
(on) Base-Emitter On Voltage V
CE
= -1V, I
C
= -300mA -1.2 V
f
T
Current Gain Bandwidth Product V
CE
= -5V, I
C
= -10mA, f=20MHz 100 MHz
C
ob
Output Capacitance V
CB
= -10V, I
E
=0, f=1MHz 12 pF
1. Collector 2. Base 3. Emitter
TO-92
1