1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
2 01.11.2003
BC 327 / BC 328 General Purpose Transistors
PNP Si-Epitaxial PlanarTransistors PNP
Power dissipation – Verlustleistung 625 mW
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (T
A
= 25g47C) Grenzwerte (T
A
= 25g47C)
BC 327 BC 328
Collector-Emitter-voltage B open - V
CE0
45 V 25 V
Collector-Emitter-voltage B shorted - V
CES
50 V 30 V
Emitter-Base-voltage C open - V
EB0
5 V
Power dissipation – Verlustleistung P
tot
625 mW
1
)
Collector current – Kollektorstrom (DC) - I
C
800 mA
Peak Coll. current – Kollektor-Spitzenstrom - I
CM
1 A
Base current – Basisstrom - I
B
100 mA
Junction temp. – Sperrschichttemperatur T
j
150g47C
Storage temperature – Lagerungstemperatur T
S
- 65…+ 150g47C
Characteristics, T
j
= 25g47C Kennwerte, T
j
= 25g47C
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
- V
CE
= 1 V, - I
C
= 100 mA
Group -16 h
FE
100 160 250
Group -25 h
FE
160 250 400
Group -40 h
FE
250 400 630
- V
CE
= 1 V, - I
C
= 300 mA
Group -16 h
FE
60 130 –
Group -25 h
FE
100 200 –
Group -40 h
FE
170 320 –