1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0065C0109C0112C0108C0105C0102C0105C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
PNP Silicon
MAXIMUM RATINGS
Rating Symbol BC307, B, C BC308C Unit
Collector–Emitter Voltage V
CEO
–45 –25 Vdc
Collector–Base Voltage V
CBO
–50 –30 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–100 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.0
8.0
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
357 °C/W
Thermal Resistance, Junction to Case R
C0113JC
125 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage BC307,B,C
(I
C
= –2.0 mAdc, I
B
= 0) BC308C
V
(BR)CEO
–45
–25
—
—
—
—
Vdc
Emitter–Base Breakdown Voltage BC307,B,C
(I
E
= –100 C0109Adc, I
C
= 0) BC308C
V
(BR)EBO
–5.0
–5.0
—
—
—
—
Vdc
Collector–Emitter Leakage Current
(V
CES
= –50 V, V
BE
= 0) BC307,B,C
(V
CES
= –30 V, V
BE
= 0) BC308C
(V
CES
= –50 V, V
BE
= 0) T
A
= 125°C BC307,B,C
(V
CES
= –30 V, V
BE
= 0) T
A
= 125°C BC308C
I
CES
—
—
—
—
–0.2
–0.2
–0.2
–0.2
–15
–15
–4.0
–4.0
nAdc
µA
Order this document
by BC307/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0066C0067C0051C0048C0055
C0066C0067C0051C0048C0055C0066
C0066C0067C0051C0048C0055C0067
C0066C0067C0051C0048C0056C0067
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
 Motorola, Inc. 1997
COLLECTOR
1
2
BASE
3
EMITTER
REV 1