©2003 Fairchild Semiconductor Corporation Rev. A, October 2003
BC214LB
Absolute Maximum Ratings* T
a
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage -30 V
V
CBO
Collector-Base Voltage -45 V
V
EBO
Emitter-Base Voltage -5.0 V
I
C
Collector Current (DC)- - Continuous -500 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Voltage I
C
= -2mA, I
B
= 0 -30 V
V
(BR)CBO
Collector-Base Voltage I
C
= -10µA, I
E
= 0 -45 V
V
(BR)EBO
Emitter-Base Voltage I
E
= -10µA, I
C
= 0 -5.0 V
I
CBO
Collector Cut-off Current V
CB
= -30V, I
E
= 0 -15 nA
I
EBO
Emitter Cut-off Current V
EB
= -4V, I
C
= 0 -15 nA
On Characteristics *
h
FE
DC Current Gain V
CE
= -5V, I
C
= -2mA 140 400
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
-0.25
-0.6
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -100mA, I
B
= -5mA -1.1 V
V
BE
(on) Base-Emitter On Voltage V
CE
= -5V, I
C
= -2mA -0.6 -0.72 V
Small Signal Characteristics
f
T
Current gain Bandwidth Product V
CE
= -5V, I
C
= -10mA
f = 100MHz
200 MHz
NF Noise Figure V
CE
= -5V, I
C
= -200µA
R
G
= 2kΩ, f = 15.7KHz
2.0 dB
h
fe
Small Signal Current Gain I
C
= -2mA, V
CE
= -5V
f = 1KHz
200 400
C
OB
Output Capacitance V
CB
= -10V, f = 1MHz 10 pF
BC214LB
PNP General Purpose Amplifier
This device is deisgned for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
Sourced from process 68.
1. Emitter 2. Collector 3. Base
TO-92
1