BC213L
器件描述：PNP General Purpose Amplifier
器件厂商：FAIRCHILD [Fairchild Semiconductor]
文件大小：36.92KB，共4页
Sponsor by e络盟器件资料摘要：
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
BC213L
Absolute Maximum Ratings* T
C
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage -30 V
V
CBO
Collector-Base Voltage -45 V
V
EBO
Emitter-Base Voltage -5.0 V
I
C
Collector Current (DC)- - Continuous -500 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Voltage I
C
= -2mA, I
B
= 0 -30 V
V
(BR)CBO
Collector-Base Voltage I
C
= -10µA, I
E
= 0 -45 V
V
(BR)EBO
Emitter-Base Voltage I
E
= -10µA, I
C
= 0 -5.0 V
I
CBO
Collector Cut-off Current V
CB
= -30V, I
E
= 0 -15 nA
I
EBO
Emitter Cut-off Current V
EB
= -4.0V, I
C
= 0 -15 nA
On Characteristics *
h
FE
DC Current Gain V
CE
= -5V, I
C
= -10µA
V
CE
= -5V, I
C
= -2.0mA
40
80 400
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
-0.25
-0.6
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -100mA, I
B
= -5.0mA -1.1 V
V
BE
(on) Base-Emitter On Voltage V
CE
= -5.0V, I
C
= -2.0mA -0.6 -0.72 V
Small Signal Characteristics
f
T
Current gain Bandwidth Product V
CE
= -5.0V, I
C
= -10mA
f = 100MHz
200 MHz
NF Noise Figure V
CE
= -5.0V, I
C
= -200µA
R
G
= 2.0kΩ, f = 1.0KHz
10 dB
h
fe
Small Signal Current Gain I
C
= -2.0mA, V
CE
= -5.0V
f = 1.0KHz
80
BC213L
PNP General Purpose Amplifier
• This device is deisgned for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
• Sourced from process 68.
• See PN200 for Characteristics.
1. Emitter 2. Collector 3. Base
TO-92
1
BC213L
Absolute Maximum Ratings* T
C
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage -30 V
V
CBO
Collector-Base Voltage -45 V
V
EBO
Emitter-Base Voltage -5.0 V
I
C
Collector Current (DC)- - Continuous -500 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Voltage I
C
= -2mA, I
B
= 0 -30 V
V
(BR)CBO
Collector-Base Voltage I
C
= -10µA, I
E
= 0 -45 V
V
(BR)EBO
Emitter-Base Voltage I
E
= -10µA, I
C
= 0 -5.0 V
I
CBO
Collector Cut-off Current V
CB
= -30V, I
E
= 0 -15 nA
I
EBO
Emitter Cut-off Current V
EB
= -4.0V, I
C
= 0 -15 nA
On Characteristics *
h
FE
DC Current Gain V
CE
= -5V, I
C
= -10µA
V
CE
= -5V, I
C
= -2.0mA
40
80 400
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
-0.25
-0.6
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -100mA, I
B
= -5.0mA -1.1 V
V
BE
(on) Base-Emitter On Voltage V
CE
= -5.0V, I
C
= -2.0mA -0.6 -0.72 V
Small Signal Characteristics
f
T
Current gain Bandwidth Product V
CE
= -5.0V, I
C
= -10mA
f = 100MHz
200 MHz
NF Noise Figure V
CE
= -5.0V, I
C
= -200µA
R
G
= 2.0kΩ, f = 1.0KHz
10 dB
h
fe
Small Signal Current Gain I
C
= -2.0mA, V
CE
= -5.0V
f = 1.0KHz
80
BC213L
PNP General Purpose Amplifier
• This device is deisgned for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
• Sourced from process 68.
• See PN200 for Characteristics.
1. Emitter 2. Collector 3. Base
TO-92
1