BC212L

PNP General Purpose Amplifier
This device is designed for general pur pose a mpli fier a p p lications at co llector currents to 300mA.
Sourced from Process 68.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
°C-55 to +150Operating and Storage Junction Temperature Range
T
J, T stg
mA300Collector Current - Continuous
I
C
V5Emitter-Base Voltage
V
EBO
V60Collector-Base Voltage
V
CBO
V50Collector-Emitter Voltage
V
CEO
UnitsValue ParameterSymbol
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle ope rations.
Thermal Characteristics T A = 25°C unless otherwise noted
°C/W200Thermal Resistance, Junction to Ambient
R
θJA
°C/W83.3Thermal Resistance, Junction to Case
R
θJC
mW
mW/°C
625
5.0
Total Device Dissipation
Derate above 25°C
P
D

UnitsMaxCharacteristicSymbol

BC212L
2000 Fairchild Semiconductor International Rev. A 7/24/00
TO-92
B
C
E